2005. 5. 27 1/2 semiconductor technical data KDR552F schottky barrier type diode revision no : 0 for high speed switching. features low reverse current, low capacitance. small package : tfsc. maximum rating (ta=25 ) tfsc dim millimeters a b c d e 1.00 0.05 0.80+0.10/-0.05 0.60 0.05 0.30 0.05 0.40 max cathode mark c d b a e f 0.13 0.05 f + _ + _ + _ + _ 1. anode 2. cathode electrical characteristics (ta=25 ) type name marking 7 characteristic symbol rating unit repetitive peak reverse voltage v rrm 25 v reverse voltage v r 25 v average forward current i o 50 ma non-repetitive peak surge current (10ms) i fsm 200 ma junction temperature t j 125 storage temperature range t stg -55 125 characteristic symbol test condition min. typ. max. unit forward voltage v f i f =1ma - - 0.33 v i f =5ma - - 0.38 reverse current i r v r =20v - - 0.45 a total capacitance c t v r =1v, f=1mhz - - 2.80 pf
2005. 5. 27 2/2 KDR552F revision no : 0 i f - v f i r - v r c t - v r 1.0 1.0 10 10 0.1 0.1 forward voltage v f (v) forward current i f (a) reverse current i r (a) total capacttance c t (pf) reverse current v r (v) reverse current v r (v) 0 0 0.2 0.4 0.6 10 0.8 10 0 10 -1 10 -2 10 -3 10 -4 10 -5 10 -6 10 -7 10 -8 10 -4 10 -5 10 -6 10 -7 10 -8 10 1 10 20 30 40 f=1mhz pulse test ta = 75 c ta = 25 c ta = 75 c ta = 25 c
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